BoronPlus planar diffusion sources have found widespread application in many semiconductor processing operations since they were first introduced to the industry in 1975. The increasing popularity of the sources can be attributed in part to the desirable combination of properties they exhibit including the unique diffusion-controlled evolution rate of B2O3 during use. The BoronPlus sources require a minimum amount of handling during use and produce a pure deposition on large diameter silicon wafers with excellent uniformity. In general, the BoronPlus sources exhibit a minimum of the undesirable characteristics of various other gas, liquid, and solid boron sources while retaining many of their desirable features.
Three Sources Meet Varying Needs.
Three BoronPlus sources are available to meet the variety of needs in silicon processing. Recommended temperature ranges for the sources are:
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Each source is produced from a glass containing B2O3 and the extremely stable oxides of BaO, MgO, Al2O3 and SiO2. The glass composition is held within tight limits to assure melt-to-melt uniformity. The raw materials are melted and cast into billets utilizing a unique glass manufacturing process that ensures a homogeneous distribution of boron oxide throughout the bulk of the material. Each glass billet is subsequently nucleated and crystallized in a uniform way to provide the necessary high temperature rigidity to the sources. The billets are then turned to the desired diameter and sliced into wafers using a conventional ID saw.
BoronPlus® is a registered trademark of Techneglas Inc.
Page 1 | Page
2 | Page
3 | Page
4 | Page
5 | Page
6 | Page
7 | More
Info |